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Cameca IMS 6f diagram

SIMS Depth profile


 

 

 

Surface Analysis Lab

Room: 320 EGRC   Contact: Fred Stevie

SIMS Images
Cameca IMS 6f

Capabilities   O2+,O-,Cs+, Sputtering Sources
Analysis of + or - ions
SIMS Depth Profiling, Mass Spectra,
Digital Image Acquisition & Processing
Beam Currents   <1µA with <2% drift / hour
Mass to Charge Range   1 to 560 amu
Mass Resolution   (M/_M) 20,000
Detection Limits   B, 7xE12 at/cc; P, 3 x1013 at/cc; As, 3xE13at/cc; H, 2xE16at/cc in Si
Image Resolution   Microscope >0.5 µm; Microprobe >0.2µm
Vacuum   < 1 x E-9 Torr in analysis chamber
Features   Normal Incidence Charge Neutralization Electron Gun
Sample Rotation Stage for High Resolution Depth Profiling
O2 Flood System
Cryogenic Sample Stage
2-D and 3-D SIMS Mapping
Specimen Considerations   Vacuum Compatible Solid
Specimen size 6 mm x 6 mm x 1 mm
Conductor, Semiconductor or Insulator
     

 

 

Last updated January 22, 2008

Campus Box 7531 Room 318 EGRC, 2410 Campus Shore Dr., Raleigh NC 27695
Phone: (919) 515-2128 or 515-3841 Fax: (919) 515-6965