| Cameca 6f |
| Capabilities |
- O2+,O-,Cs+, Sputtering Sources
- Analysis of + or - ions
- SIMS Depth Profiling
- Mass Spectra
- Digital Image Acquisition & Processing
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| Beam Currents |
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| Mass to Charge Range |
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| Mass Resolution |
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| Detection Limits |
- B, 7xE12 at/cc
- P, 3 x1013 at/cc
- As, 3xE13at/cc
- H, 2xE16at/cc in Si
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| Image Resolution |
- Microscope >0.5 µm
- Microprobe >0.2µm
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| Vacuum |
- < 1 x E-9 Torr in analysis chamber
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| Features |
- Normal Incidence Charge Neutralization Electron Gun
- Sample Rotation Stage for High Resolution Depth Profiling
- O2 Flood System
- Cryogenic Sample Stage
- 2-D and 3-D SIMS Mapping
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| Specimen Considerations |
- Vacuum Compatible Solid
- Specimen size 6 mm x 6 mm x 1 mm
- Conductor, Semiconductor or Insulator
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