Office of Naval
Research
MURI Program:
Recent
reports and progress
- Quad-graph summary of
recent goals and accomplishments
- Presentations of participants at NCSU
hosted review meeting - 2/12/02
Frequently Asked
Questions:
This MURI program consists of investigators at North Carolina State University,
University of California-Santa Barbara, Rensselaer
Polytechnic Institute, and University of California-San
Diego concerned with the theoretical and experimental
application of wurtzite wide band gap (WBG)
semiconductors in efficient power switching devices.
What are the MURI Objectives?
- Theoretical and experimental
investigations regarding carrier dynamics along selected
crystallographic directions under high and very high
electric fields in wurtzite wide band gap (WBG)
semiconductors.
- Conventional and lateral
epitaxial overgrowth of GaN and AlGaN on SiC substrates.
- Chemical preparation and
fusion of optimally oriented surfaces of GaN and AlGaN on
SiC substrates.
- Fabrication of
heterostructure devices for miniature power supplies.
- Identify fundamental
mechanisms and quantify lifetime and mean free path of
electrons under various applied voltages in III-Nitride
and SiC materials.
- Determine limits of charge
carrier transport in vertically structured devices.
- Employ above information for
theoretical and the experimental design and fabrication
of heterostructure devices with ballistic mobilities for
efficient power switching and actuator control.
Who are the Principal Investigators?
Dr. Robert Davis, Principal
investigator
North Carolina State University
Department of Materials Science and Engineering
Dr. Umesh Mishra, Co-principal investigator
University of California-Santa Barbara
Department of Electrical and Computer Engineering
Dr. Michael Shur, Co-principal investigator
Rensselaer Polytechnic Institute
Department of Electrical and Computer
Engineering
Program monitor:
Dr. John Zolper
Office of Naval Research
Email: zolperj@onr.navy.mi
Phone: (703) 696-1437
|
