Multidisciplinary University Research Initiative

Publications:

North Carolina State University

Removal of 6H-SiC Substrate Influence When Evaluating GaN Thin Film Properties via X-ray I3.51. Edward A. Preble, Peter Q. Miraglia, Amy M. Roskowski, Sven Einfeldt, and Robert F. Davis. MRS Proceedings Volume 693.

"Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeo-epitaxy", S. Einfeldt, A. M. Roskowski, E. A. Preble, and R. F. Davis, Appl. Phys. Lett. 80, 563 (2002).

"Surface morphology and strain of GaN layers grown on 6H-SiC (0001) with different buffer layers", S. Einfeldt, Z. J. Reitmeier, and R. F. Davis. Submitted to J. Cryst. Growth.

"Microscopic mapping of strain relaxation in uncoalesced pendeo-epitaxy GaN on SiC", U. T. Schwarz, P. J. Schuck, R. D. Grober, A. M. Roskowski, S. Einfeldt, and R. F. Davis, submitted to Appl. Phys. Lett.

"Maskless Pendeo-epitaxial Growth of GaN Films". A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, R.F. Davis. Submitted for consideration for publication in the 2001 Special Issue of the Journal of Electronic Materials III-V Nitrides and Silicon Carbide.

"Investigations Regarding the Maskless Pendeo-epitaxial Growth of GaN Films Prior to Coalescence ". A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, R.F. Davis. Invited Paper - Submitted for consideration for publication in the IEEE Journal of Quantum Electronics

"Strain and Dislocation Reduction in Maskless Pendeo-Epitaxy GaN Thin Films". A.M. Roskowski, P.Q. Miraglia, E.A. Preble, S. Einfeldt, T. Stiles, R.F. Davis, J. Schuck, R. Grober, and U. Schwarz. 4th Int. Conf. on Nitride Semiconductors, Denver/Colorado, 2001. phys. stat. sol. (a) 188, 729 (2001).

"Surface Instability and Associated Roughness during Conventional and Pendeo-epitaxial Growth of GaN(0001) Films via MOVPE". A.M. Roskowski, P.Q. Miraglia, E.A. Preble, S. Einfeldt, and R.F. Davis. Submitted to Journal of Crystal Growth.

"Surface Instability and Associated Roughness of Pendeo-epitaxial Growth of GaN Films via Metalorganic Vapor Phase Epitaxy". Amy M. Roskowski*, Peter Q. Miraglia, Edward A. Preble, Sven Einfeldt**, and Robert F. Davis. MRS Fall 2001.

"Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films". E.A. Preble, K.M. Tracy, S. Kiesel, H. McLean, P.Q. Miraglia, R.J. Nemanich, M. Albrecht , David J. Smith , and R.F. Davis.

"Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiC-based, cross-sectional TEM samples". E.A. Preble, H.A. McLean, S.M. Kiesel, P. Miraglia, M. Albrecht, and R.F. Davis.

"Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces". P. J. Hartlieb, A. Roskowski, W. Platow, R. J. Nemanich, and R. F. Davis.

"Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN". P.J. Hartlieb, A. Roskowski, R.J. Nemanich, and R.F. Davis.

"Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate", T. Gehrke, K. J. Linthicum, D. B. Thomson, P. Rajagopal, A. D. Batchelor, R. F. Davis. Cited on the MRS web page for the Fall Meeting paper as number G3.2

"Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films via the Technique of Pendeo-Epitaxy", D. B. Thomson, T. Gehrke, K. J. Linthicum, P. Rajagopal, R. F. Davis. Cited on the MRS web page for the Fall Meeting paper as number G3.37

"Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures", T. S. Zheleva, S. A. Smith, D. B. Thomson, T. Gehrke, K. J. Linthicum, P. Rajagopal, E. P. Carlson, R. F. Davis. Cited on the MRS web page for the Fall Meeting paper as number G3.38

"Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques", K. J. Linthicum, T. Gehrke, D. B. Thomson, K. M. Tracy, E. P. Carlson, T. P. Smith, T. S. Zheleva, C. A. Zorman, M. Mehregany, R. F. Davis. Cited on the MRS web page for the Fall Meeting paper as number G4.9

"High-field Electron transport controlled by optical phonon emission in nitrides", S. M. Komirenko, K. W. Kim, V. A. Kochelap, and M. A. Stroscio in "Advanced Semiconductor Heterostructures: Novel Devices, Potential Device Applications and Basic Properties.", ed. by M.A. Stroscio and M. Dutta (World Scientific, Singapore, 2002).
                                                                     
"High-Field Electron Transport in Nanoscale Group-III Nitride Devices", S. M. Komirenko, K. W. Kim, V. A. Kochelap, and M. A. Stroscio, physica status solidi (b) Volume 228, Issue 2, p. 593 (2001).
                                                                     
"Runaway effects in nanoscale group-III nitride semiconductor structures", S. M. Komirenko, K. W. Kim, V. A. Kochelap, and  M. A. Stroscio, Physical Review B 64, 113207 (2001).
                                                                     
"Applicability of Fermi golden rule and possibility of low-field runaway transport in nitrides", S. M. Komirenko, K. W. Kim, M. A. Stroscio, and M. Dutta, Journal of Physics:Condensed Matter 13, 6233 (2001).

Presentations:

"Electron runaway in pre-threshold electric fields", S. M. Komirenko, K.W. Kim, and V.A. Kochelap, Submitted to 26th International Conference on the Physics of Semiconductors,  July 29 - August 2 2002, Edinburgh.
                                                                     
"Low-field electron runaway in nitrides", S. M. Komirenko, K.W. Kim, and V. A. Kochelap, 7th Wide Bandgap III-Nitride Workshop, Omni Richmond Hotel  Richmond, VA, USA, March 10-14, 2002.
                                                                     
"Runaway effect in nanoscale group-III-nitride devices", S. M. Komirenko, K. W. Kim, V. A. Kochelap, and M. A. Stroscio, The Fourth International Conference on Nitride Semiconductors, Denver, Colorado, July 2001.
                                                                     
"Nitride-based runaway effect devices",  S. M. Komirenko, K. W. Kim, V. A. Kochelap, Mitra Dutta, and M. A. Stroscio, Proc. of March APS Meeting, Seattle, WA (2001).