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Reports:
The MURI team meets every six months to report progress and discuss
results. Below are the presentations from most recent meetings.
- 02/12/02 Review - Hosted at North Carolina State University
- Quad
Chart Summary
- Report
Cover Sheet
Schedule
- Umesh Mishra/Steve DenBaars:
AlGaN/GaN Power HEMTs, AlGaN/GaN HBTs and AlGaN/GaN CAVETs
Michael Shur: AlN/GaN/InN-based
MOSHFETs, MISHFETs, and DHFETs
Ed Preble: SiC Influence on
X-ray Measurements of GaN Films Compared with Photoluminescence
and Electrical Data
Peter Asbeck: Barriers and
Current Flow in Vertical Transistors
Ramon Collazo: Steady-State
and Transient Electron Transport in AlN
Ted Cook: Measurements of the
E-field Breakdown and Band Offsets of SiO2
on GaN
Phil Hartlieb: Electrical,
Chemical, and Structural Characterization of the Interface formed
between Au/Pd Contact Structures and Cleaned p-type
GaN(0001) Surfaces
Evelyn Hu: Innovative Processing
for GaN Power Devices
Zach Reitmeier:
Characterization of III-Nitrides Grown on Hydrogen Etched 6H-SiC
Substrates
Sven Einfeldt: Strain and
Crystallographic Tilt in GaN Layers Grown by
Maskless Pendeoepitaxy
Sergiy Komirenko/Ki Wook Kim:
Carrier Transport Modeling for Compact
Power
Sources
David
Clarke: Recent Progress on GaN Growth and Piezoelectric
Coefficients
Jaesob
Lee: Effects of Surface Oxide on Wafer Bonding of GaN and SiC
08/01/01 Review - Hosted at Rensselaer Polytechnic Institute
- Schedule
K. W.
Kim and S. Komirenko: High-Field Transport Modeling for
Compact Power Sources
R.
Collazo, R. Schlesser, and Z. Sitar: Limits of ballistic
transport in AlN
Z.
Reitmeier and R. F. Davis: The Effect of SiC Substrate Quality
and Surface Preparation on Epitaxial III-Nitride Films
A.
Roskowski and R. F. Davis: Crystallographic Tilt, Strain and
Surface Morphology of Uncoalesced and Coalesced Pendeo- Epitaxy
GaN Thin Films
R.
Nemanich: Polar Effects in Wafer Bonding of GaN and SiC
- Peter
Asbeck: Progress in Hot Electron Transistor Research
Michael
Shur: GaN-based MOSHFETs, MISHFETs, HFETs, and MESFETs for
Switching Applications
Sergei
Rumyantsev: Current Collapse in GaN-based FETs
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